Search results for "Silicon rich"

showing 2 items of 2 documents

Boron doping of silicon rich carbides: Electrical properties

2013

Boron doped multilayers based on silicon carbide/silicon rich carbide, aimed at the formation of silicon nanodots for photovoltaic applications, are studied. X-ray diffraction confirms the formation of crystallized Si and 3C-SiC nanodomains. Fourier Transform Infrared spectroscopy indicates the occurrence of remarkable interdiffusion between adjacent layers. However, the investigated material retains memory of the initial dopant distribution. Electrical measurements suggest the presence of an unintentional dopant impurity in the intrinsic SiC matrix. The overall volume concentration of nanodots is determined by optical simulation and is shown not to contribute to lateral conduction. Remarka…

Silicon nanodotMaterials scienceSiliconSilicon dioxideBoron dopingInorganic chemistrychemistry.chemical_elementSilicon carbide02 engineering and technologySettore ING-INF/01 - Elettronica7. Clean energy01 natural sciencesSettore FIS/03 - Fisica Della MateriaCarbidechemistry.chemical_compoundUV-vis reflection and transmittanceMultilayer0103 physical sciencesSilicon carbideGeneral Materials ScienceElectrical measurementsSilicon rich carbide010302 applied physicsDopantbusiness.industryMechanical EngineeringDopingFourier transform infrared spectroscopySilica021001 nanoscience & nanotechnologyCondensed Matter PhysicsSilicon richOptical propertieElectrical transportchemistryMechanics of MaterialsUV-vis reflection and transmittance Doping (additives)Boron-dopingOptoelectronicsElectric propertieNanodot0210 nano-technologybusinessX ray diffraction Boron carbideMaterials Science and Engineering: B
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Memory cell structure integrated on semiconductor

2004

This invention relates to a memory cell Which comprises a capacitor having a ?rst electrode and a second electrode separated by a dielectric layer. Such dielectric layer com prises a layer of a semi-insulating material Which is fully enveloped by an insulating material and in Which an electric charge is permanently present or trapped therein. Such electric charge accumulated close to the ?rst or to the second electrode, depending on the electric ?eld betWeen the electrodes,therebyde?ningdifferentlogiclevels.

NULLMemory cellSi nanostructuresSilicon rich oxideSettore ING-INF/01 - ElettronicaCMOS technologynon volatile memories
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